to-25 2-2l plastic-encapsulate t ransistors 2sd2118 tra nsistor (npn) features z low v ce(sat) . v ce(sat) = 0.25v (typ.)(i c /i b = 4a / 0.1a) z excellent dc c urrent g ain c haracteristics. maximum ratings (t a =25 unless otherwise noted) symbol para meter value unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 6 v i c collector current -continuous 5 a p c collector power dissipation 1 w t j junction temperature 150 t stg storage temperature -55-150 electrical chara cteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =50a,i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 20 v emitter-base breakdown voltage v (br)ebo i e =50a,i c =0 6 v collector cut-off current i cbo v cb =40v,i e =0 0.5 a emitter cut-off current i ebo v eb =5v,i c =0 0.5 a dc current gain h fe v ce =2v,i c =0.5a 120 390 collector-emitter saturation voltage v ce(sat) i c =4a,i b =100ma 1 v transition frequency f t v ce =6v,i c =50ma,f=100mhz 150 mhz collector output capacitance c ob v cb =20v,i e =0,f=1mhz 30 pf classific ation of h fe rank q r range 120-270 180 - 390 to-25 2-2l 1.base 2.collector 3.emitter 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,nov,2011
0.1 1 10 10 100 1000 70 100 1 10 100 1000 10 100 1000 200 400 600 800 1000 1200 1 10 100 1000 1 10 100 1000 500 1 10 100 1000 200 400 600 800 1000 1200 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 0.0 0.5 1.0 1.5 2.0 2.5 0 200 400 600 c ob c ib f=1mhz i e =0/i c =0 t a =25 capacitance c (pf) reverse voltage v (v) 20 v cb / v eb c ob / c ib 30 10 10 30 common emitter v ce =6v t a =25 transition frequency f t (mhz) collector current i c (ma) h fe 5000 t a =100 t a =25 =40 i c v cesat collector-emitter saturation voltage v cesat (mv) collector current i c (ma) 5000 t a =25 t a =100 common emitter v ce =2v collcetor current i c (ma) base-emmiter voltage v be (mv) 300 200 100 2sd2118 f t i c common emitter v ce =2v t a =25 t a =100 i c dc current gain h fe collector current i c (ma) 5000 i c v be 5000 =40 t a =100 t a =25 i c v besat base-emitter saturation voltage v besat (mv) collector current i c (ma) collector power dissipation p c (w) ambient temperature t a ( ) p c t a static characteristic 2.0ma 1.8ma 1.6ma 1.4ma 1.2ma 1.0ma 0.8ma 0.6ma 0.4ma common emitter t a =25 i b =0.2ma collector current i c (ma) collector-emitter voltage v ce (v) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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